phase control thyristor AT875HT repetitive voltage up to 4400 v mean forward current 2003 a surge current 25,2 ka final specification feb. 17 - issue: 4 symbol characteristic conditions tj [c] value unit blocking v rrm repetitive peak reverse voltage 120 4400 v v rsm non-repetitive peak reverse voltage 120 4500 v v drm repetitive peak off-state voltage 120 4400 v i rrm repetitive peak reverse current v=vrrm 120 200 ma i drm repetitive peak off-state current v=vdrm 120 200 ma conducting i t (av) mean forward current 180 sin ,50 hz, th=55c, double side cooled 2003 a i t (av) mean forward current 180 sin ,50 hz, tc=85c, double side cooled 1522 a i tsm surge forward current sine wave, 10 ms 120 25,2 ka i2 t i2 t without reverse voltage 3175 x 10 3 a2s v t on-state voltage on-state current = 2000 a 25 2,00 v v t(to) threshold voltage 120 1,30 v r t on-state slope resistance 120 0,334 mohm switching di/dt critical rate of rise of on-state current, min. from 75% vdrm up to 1600 a; gate 10v, 5 w 120 200 a/s dv/dt critical rate of rise of off-state voltage, min. linear ramp up to 70% of vdrm 120 1000 v/s t d gate controlled delay time, typical vd=100v; gate source 40v, 10 w , tr=.5 s 25 3 s t q circuit commutated turn-off time, typical dv/dt = 20 v/s linear up to 75% vdrm 400 s q rr reverse recovery charge di/dt = -20 a/s, i= 1050 a 120 c i rr peak reverse recovery current vr= 50 v a i h holding current, typical vd=5v, gate open circuit 25 300 ma i l latching current, typical vd=12v, tp=30s 25 1000 ma gate v gt gate trigger voltage vd=12v 25 3,50 v i gt gate trigger current vd=12v 25 400 ma v gd non-trigger gate voltage, min. vd=vdrm 120 0,80 v v fgm peak gate voltage (forward) 30 v i fgm peak gate current 10 a v rgm peak gate voltage (reverse) 10 v p gm peak gate power dissipation pulse width 100 s 150 w p g average gate power dissipation 2 w mounting r th(j-h) thermal impedance, dc junction to heatsink, double side cooled 11 c/kw r th(c-h) thermal impedance case to heatsink, double side cooled 2 c/kw t j operating junction temperature -30 / 120 c f mounting force 40.0 / 50.0 kn mass 1500 g ordering information : AT875HT s 44 standard specification vrrm/100 poseico spa via pillea 42 - 44, 16153 genova - italy tel. + 39 010 8599400 - fax + 39 010 8682006 sales office: tel. + 39 010 8599400 - sales@poseico.com
AT875HT phase control thyristor final specification feb. 17 - issue: 4 dissipation characteristics square wave dc 180 120 90 60 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 2500 3000 th [ c] i f(av) [a] dc 180 120 90 60 30 0 1000 2000 3000 4000 5000 6000 7000 0 500 1000 1500 2000 2500 3000 p f(av) [w] i f(av) [a]
AT875HT phase control thyristor final specification feb. 17 - issue: 4 dissipation characteristics sine wave 180 120 90 60 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 2500 th [ c] i f(av) [a] 180 120 90 60 30 0 1000 2000 3000 4000 5000 6000 7000 0 500 1000 1500 2000 2500 p f(av) [w] i f(av) [a]
AT875HT phase control thyristor final specification feb. 17 - issue: 4 cathode terminal type din 46244 - a 4.8 - 0.8 gate terminal type amp 60598 - 1 distributed by 0 1000 2000 3000 4000 5000 6000 7000 0 1 2 3 4 on - state current [a] on - state voltage [v] on - state characteristic tj = 120 c 0 2 4 6 8 10 12 0,001 0,01 0,1 1 10 100 zth j - h [ c/kw] t[s] transient thermal impedance double side cooled 0 5 10 15 20 25 30 1 10 100 itsm [ka] n cycles surge characteristic tj = 120 c all the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < . 03 mm and roughness < 2 m . in the interest of product improvement poseico spa reserves the right to change any data given in this data sheet at any time without previous notice . if not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported .
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